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News > Company News |
NXP releases super durable XR LDMOS RF power transistor |
Time: 2018-06-20 |
NXP Semiconductors N.V. (NASDAQ:NXPI) has recently released the latest "super durable" series of XR LDMOS RF power transistors, dedicated to the worst engineering environment. The XR series is as strong as nails and can withstand harsh applications such as industrial lasers, metal etching and concrete drilling. With NXP's industry-leading LDMOS technology, the XR family has extended LDMOS to some of the few areas that are still using VDMOS and bipolar transistors. The first XR RF power transistor BLF578XR (Booth No. 420) will be displayed at the 2011 IEEE MTT-S International Microwave Symposium (IMS2011), held in Baltimore, Maryland, USA this week.
Sudden and severe load disturbances are very common in some RF applications. RF power transistors should be able to deal with these disturbances and will not fail or age in years of use. In the lab environment, NXP introduced the load mismatch, and the mismatch degree was represented by voltage Bobbi (VSWR) to reproduce these load disturbances. Most base stations and broadcast applications require "rugged" RF power transistors, requiring Bobbi to withstand 10:1 at all phases. The "super durable" BLF578XR can easily withstand 125:1's Bobbi repeat test, which is the highest measured at the test unit. This is very critical for some ISM applications, which usually require RF power transistors to withstand more than 100:1 of Bobbi test.
Mark Murphy, director of radiofrequency power products at NKC semiconductor, said: "our new XR series has the first class durability to open up a new market for RF power, which is unthinkable in the past. The mismatch test, BLF578XR withstood 125:1's stationed in Bobbi, the test results show everything. To further demonstrate the durability of the XR series, we reproduced a variety of extreme working environments, which proved that the performance of BLF578XR was not affected by the slightest. We welcome radio frequency power engineers to verify them personally - whether they are at the IMS2011 exhibition, or watch our 'unbreakable' video, and can also be tested in their own laboratories. NXP, as the leading producer of mass production, has over 15 years of market experience. The LDMOS product is not only excellent in performance, but also as strong and durable as VDMOS, without increasing customer cost, and will continue to lead the technology progress in the field of high performance radio frequency. "
The new BLF578XR is the super durable version of NXP's popular BLF578, while BLF578 is the main force of RF power transistors in many applications such as broadcasting and ISM. In most applications, BLF578XR can be replaced by simple cartridge instead of BLF578.
Technical characteristics
BLF578XR is manufactured by NXP's most advanced LDMOS technology, specially designed for applications requiring very strong durability.
Frequency range: 0-500MHz
Gain: 24dB (225MHz)
Efficiency: 70% (225MHz)
. VSWR:125:1 (all phases of 1200W)
Peak output power: 1400W (pulse)
Heat enhancement: 0.14K/W
Time to market
NXP BLF578XR is available and will be produced in the third quarter of 2011. For more information, please visit: http://www.nxp.com/pip/BLF578XR.html
link
Unassailable LDMOS BLF578XR (video)
NJP BLF578XR product information
NXP broadcast and ISM high performance RF power amplifier
Radiofrequency Handbook of NJP
About NJI Pu HPRF
NXP is a well deserved leader in the field of high-performance radio frequency (HPRF), with more than 4 billion shipments of RF components per year. From satellite receivers, cellular base stations, radio transmitters to ISM (industry, science and medical), aviation and national defense applications, ngpu is far ahead of the high performance hybrid signal IC products, and is also a recognized leader in the field of high speed converter SERDES serial interface. NXP provides a wide range of high-speed data converter products, including JESD204A standard CGV, CMOS LVCOMS and LVDS DDR interface. These high speed converters are applicable to wireless infrastructure, industry, science, medical, aviation and national defense.
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